Within VTT Group ( , commercial production of microelectromechanical systems (MEMS) and other micro- and nanoelectronic devices is carried out by VTT Memsfab Ltd. The company offers versatile contract manufacturing services based on extensive technical expertise, a unique equipment environment and a comprehensive co-operation network.

 VTT Technical Research Centre of Finland is the biggest multi-technological applied research organisation in Northern Europe. VTT provides high-end technology solutions and innovation services to its customers, whether companies or the public sector. The expertise of VTT R&D is easily accessible to VTT Memsfab Ltd when state-of-the-art research and device development services are needed.


 The Semiconductor Laboratory of VTT was founded in 1964. VTT developed processes for CMOS and BiCMOS in the 1980s and 1990s. Many other technologies have since been developed on the CMOS basis.

 MEMS and other processes

 Thin-film surface micromachining technology was launched in early 1990s. The properties of polycrystalline silicon and silicon nitride were tailored for MEMS. New materials and material combinations, such as silicon-on insulator (SOI) or amorphous metals, and novel processes such as critical-point drying, anhydrous HF vapor etching, and atomic layer deposition have been taken into use as a technology forerunner. Our excellent lithography (i-line stepper, contact, e-beam, and nanoimprinting) and the high-class clean room help in maintaining high-yield MEMS integration cycles.

 Integrated passive devices (IPD) and circuits have been developed. In addition to CMOS-based resistor and MIM capacitor technologies, also electroplated copper with thick polymeric intermediate dielectrics are available for high-Q inductors. Piezo- and ferroelectric devices are investigated for RF applications and for actuating MEMS. Superconducting tunnel-junction devices are available with a nanolithography option.

 Various types of radiation and photon detectors can be fabricated.

 Silicon photonics is based on low-loss waveguides fabricated in the device layer of SOI.