Our Foundry

Processing capabilities

Cleanroom characteristics

  • Total Area 2 600 m2
  • Cleanroom Classification ISO 4…ISO 6
  • Temperature 21 °C ± 0,5 °C
  • Relative humidity 45 % ± 5
  • Clean bay – Service chase type
  • Raised perforated floor
  • Subfab with technical support areas

Labs with built-in cleanroom

  • Micro-packaging lab – dicing saws, wire bonding
  • SubTech lab – Ion implantation, CMP, backgrinder, wafer bonder
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Lithography

i-line stepper, 5:1, 0.35 µm CD
Contact/proximity aligners
Electron-beam writing
Nanoimprinting (step & stamp)

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Etching

Polysilicon/nitride
Oxide; thin film and Advanced Oxide Etching
Metals; Al, Mo, Ti-W, Nb (TCP)
Deep silicon etching;
Anhydrous HF vapour
Wet etching, various
Critical-point drying

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Deposition

Six sputtering tools
LPCVD of nitride, poly, and oxide
TEOS, LTO
PECVD; nitride and oxide
ALD: aluminium oxide, titanium oxide
Parylene

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Plating, Spin Coating

Cu (via or wiring), Ni, Sn-Ag, Sn-Pb,
In-Sn, Au
Polyimide, BCB

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3D Integration

CMP of Si/oxide or copper
Direct wafer bonding
Grinding
Spin-etching
Thin-wafer handling
Ion trimming

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Characterization

Scanning electron microscope
Scanning probe microscope
Scanning acoustic microscope
Optical film characterization
Profilometers
Atomic force microscope
Alignment accuracy measurement
Wafer defect inspection system

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Back End

Wafer dicing
Flip-chip bonding
Wire bonding
Thermal compression bonding

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Ion Implantation

Medium-current; n- or p-type doping of silicon

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Testing

Wafer level test systems
High speed electrical and optical testing capabilities
Multiple labs for offline testing and characterization