Processing capabilities
Cleanroom characteristics
- Total Area 2 600 m2
- Cleanroom Classification ISO 4…ISO 6
- Temperature 21 °C ± 0,5 °C
- Relative humidity 45 % ± 5
- Clean bay – Service chase type
- Raised perforated floor
- Subfab with technical support areas
Labs with built-in cleanroom
- Micro-packaging lab – dicing saws, wire bonding
- SubTech lab – Ion implantation, CMP, backgrinder, wafer bonder
Lithography
i-line stepper, 5:1, 0.35 µm CD
Contact/proximity aligners
Electron-beam writing
Nanoimprinting (step & stamp)
Etching
Polysilicon/nitride
Oxide; thin film and Advanced Oxide Etching
Metals; Al, Mo, Ti-W, Nb (TCP)
Deep silicon etching;
Anhydrous HF vapour
Wet etching, various
Critical-point drying
Deposition
Six sputtering tools
LPCVD of nitride, poly, and oxide
TEOS, LTO
PECVD; nitride and oxide
ALD: aluminium oxide, titanium oxide
Parylene
Plating, Spin Coating
Cu (via or wiring), Ni, Sn-Ag, Sn-Pb,
In-Sn, Au
Polyimide, BCB
3D Integration
CMP of Si/oxide or copper
Direct wafer bonding
Grinding
Spin-etching
Thin-wafer handling
Ion trimming
Characterization
Scanning electron microscope
Scanning probe microscope
Scanning acoustic microscope
Optical film characterization
Profilometers
Atomic force microscope
Alignment accuracy measurement
Wafer defect inspection system
Back End
Wafer dicing
Flip-chip bonding
Wire bonding
Thermal compression bonding
Ion Implantation
Medium-current; n- or p-type doping of silicon
Testing
Wafer level test systems
High speed electrical and optical testing capabilities
Multiple labs for offline testing and characterization